Changes of the Defects Associated with He after the High-Temperature Annealing of Electronic Components with the Nanocrystalline Titanium Films Containing He 

Chao Hong

Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

Abstract: The annealing processing has a certain influence on the defect structure of the material. In this pa-per, titanium disc is taken as a cathode target with Si as the substrate. DC magnetron sputtering is used to prepare the nanocrystalline titanium film containing He used for electronic components of different concentrations. Then high temperature annealing treatment is carried out before observation and analysis. Finally, it’s concluded that the electronic component takes use of the nanocrystalline titanium film that contains He to form TiSi2 crystal with preferential orientation. And the surface layer of sample titanium film and the defect structure of protective layer after annealing have changed. This study provides a useful reference for the research and application of the nanocrystalline titanium film containing He.

Keywords: Annealing treatment; Defect structure; Nanocrystalline titanium film containing He